Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

ABSTRACT

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present disclosure is a divisional of U.S. patent application Ser.No. 15/378,854, filed on Dec. 14, 2016, now U.S. patent Ser. No.10/604,841. The entire disclosure of the application referenced above isincorporated herein by reference.

FIELD

The present disclosure relates to substrate processing systems, and moreparticularly to substrate processing systems including showerheads thatdeliver radicals and precursor gas to a downstream chamber.

BACKGROUND

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Work of the presently namedinventors, to the extent it is described in this background section, aswell as aspects of the description that may not otherwise qualify asprior art at the time of filing, are neither expressly nor impliedlyadmitted as prior art against the present disclosure.

Substrate processing systems may be used to deposit film on a substratesuch as a semiconductor wafer. The substrate processing systemstypically include a processing chamber and a substrate support. Duringfilm deposition, radicals and precursor gas maybe supplied to theprocessing chamber.

For example, the processing chamber may include an upper chamber, alower chamber and a substrate support. A showerhead may be arrangedbetween the upper chamber and the lower chamber. The substrate isarranged on the substrate support in the lower chamber. A plasma gasmixture is supplied to the upper chamber and plasma is struck in theupper chamber. Some of the radicals generated by the plasma flow throughthe showerhead to the lower chamber. The showerhead filters ions andshields UV light from reaching the lower chamber. A precursor gasmixture is supplied to the lower chamber through the showerhead andreacts with the radicals to deposit film on the substrate.

Typically, the showerhead does not have a thermal control system.However, in some processing systems, a basic thermal control system isused to control a temperature of an outer edge of the showerhead, whichis accessible and not under vacuum. The basic thermal control systemdoes not uniformly control temperature across the showerhead due to theheat from the plasma. In other words, the temperature at the center ofthe showerhead increases. Temperature changes also occur with processchanges such as plasma on/off, pressure, flow rate, and/or pedestaltemperature. Variations in the temperature of the showerhead adverselyimpact the uniformity of the deposition process and defect performance.

SUMMARY

A substrate processing system includes a first chamber including asubstrate support. A showerhead is arranged above the first chamber andis configured to filter ions and deliver radicals from a plasma sourceto the first chamber. The showerhead includes a heat transfer fluidplenum including an inlet to receive heat transfer fluid and a pluralityof flow channels to direct the heat transfer fluid through a centerportion of the showerhead to an outlet to control a temperature of theshowerhead, a secondary gas plenum including an inlet to receivesecondary gas and a plurality of secondary gas injectors to inject thesecondary gas into the first chamber, and a plurality of through holespassing through the showerhead. The through holes are not in fluidcommunication with the heat transfer fluid plenum or the secondary gasplenum.

In other features, the heat transfer fluid plenum includes a firstplenum in fluid communication with the inlet. The first ends of the flowchannels are in communication with the first plenum. A second plenum isin fluid communication with opposite ends of the flow channels.

In other features, the heat transfer fluid plenum includes a firstplenum in fluid communication with the inlet, a second plenum in fluidcommunication with first ends of the flow channels, a first plurality ofrestrictions arranged between the first plenum and the second plenum torestrict fluid flow therebetween, a third plenum in fluid communicationwith opposite ends of the flow channels, a fourth plenum in fluidcommunication with the outlet, and a second plurality of restrictionsarranged between the third plenum and the fourth plenum to restrictfluid flow therebetween.

In other features, the plurality of flow channels flow in a radialdirection from one side of the showerhead to an opposite side of theshowerhead. The plurality of flow channels defines a straight path. Theplurality of flow channels defines a curved path. The plurality of flowchannels defines a sinusoidal-shaped path.

In other features, the secondary gas plenum includes a first plenum, asecond plenum, and a flow restriction arranged between the first plenumand the second plenum.

In other features, the flow restriction comprises a first plurality ofwalls, and a plurality of slots defined between the first plurality ofwalls. The first plurality of walls is arcuate-shaped. A secondplurality of walls is arranged around the through holes in the secondplenum. The second plurality of walls is cylinder-shaped.

In other features, the secondary gas injectors are in fluidcommunication with the second plenum. A plurality of restrictionsarranged between the second plenum and the secondary gas injectors.

In other features, the plurality of flow channels includes inlets andoutlets. The inlets of the plurality of flow channels are arranged onone side of the showerhead, the outlets of the plurality of flowchannels are arranged on the one side between the inlets, and theplurality of flow channels connect to the inlets, travel across theshowerhead and return back across the showerhead to the outlets.

In other features, a second chamber is arranged above the first chamber.The showerhead is arranged between the first chamber and the secondchamber. A coil is arranged around the second chamber. An RF generatoris connected to the coil to generate plasma in the second chamber.

In other features, at least one of the flow channels includes a flowrestriction. The heat transfer fluid comprises liquid. The heat transferfluid comprises gas. The heat transfer fluid does not flow into thefirst chamber.

In other features, the secondary gas injectors extend a predetermineddistance from a bottom surface of the showerhead, wherein thepredetermined distance is in a range from 0.1″ to 1.5″. The throughholes have a diameter in a range from 0.05″ to 0.3″.

In other features, the showerhead includes a cylindrical wall thatextends from a bottom surface thereof and that is located radiallyoutside of the plurality of through holes and the plurality of secondarygas injectors. The showerhead includes a cylindrical wall that extendsupwardly from a top surface thereof and that is located radially outsideof the plurality of through holes and the plurality of secondary gasinjectors.

In other features, a first O-ring is arranged between a top surface ofthe showerhead and the upper chamber and a second O-ring is arrangedbetween the bottom surface of the showerhead and the lower chamber.

Further areas of applicability of the present disclosure will becomeapparent from the detailed description, the claims and the drawings. Thedetailed description and specific examples are intended for purposes ofillustration only and are not intended to limit the scope of thedisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is a functional block diagram of an example of a substrateprocessing chamber including a showerhead according to the presentdisclosure;

FIG. 2A is a bottom perspective view of an example of the showerheadaccording to the present disclosure;

FIG. 2B is a side cross-sectional view illustrating a groove forreceiving an O-ring according to the present disclosure;

FIG. 3 is a top perspective view of an example of the showerheadaccording to the present disclosure;

FIG. 4A is a plan view illustrating a bottom surface of an example ofthe showerhead according to the present disclosure;

FIG. 4B is a plan view illustrating an example of a plurality of throughholes arranged around a secondary gas injector according to the presentdisclosure;

FIG. 4C is a plan view illustrating another example of a plurality ofthrough holes arranged around a secondary gas injector according to thepresent disclosure;

FIG. 5A is a side cross-sectional view of an example of the showerheadaccording to the present disclosure;

FIG. 5B is a side cross-sectional view of an example showing ashowerhead formed by multiple adjacent layers;

FIG. 6 is an enlarged side cross-sectional view of another example ofthe showerhead according to the present disclosure;

FIG. 7 is a side cross-sectional view of the showerhead of FIG. 6according to the present disclosure;

FIG. 8A is an enlarged side cross-sectional view of another example ofthe showerhead including a downwardly-projecting wall according to thepresent disclosure;

FIG. 8B is an enlarged side cross-sectional view of another example ofthe showerhead including an upwardly-projecting wall according to thepresent disclosure;

FIG. 9 is a plan view of an example of a top surface of a middle layerof the showerhead according to the present disclosure;

FIG. 10 illustrates an example of a channel with a restriction tocontrol flow of fluid through the channel according to the presentdisclosure;

FIG. 11 is a plan view of an example of a bottom surface of the middlelayer of the showerhead according to the present disclosure;

FIG. 12 is a plan view of another example of a top surface of the middlelayer of the showerhead including alternating heat transfer fluid inletand outlet pairs arranged along one edge thereof according to thepresent disclosure;

FIG. 13 is a plan view of a bottom surface of the middle layer of theshowerhead in FIG. 12 according to the present disclosure; and

FIG. 14 is a side cross-sectional view of the showerhead in FIGS. 12 and13.

In the drawings, reference numbers may be reused to identify similarand/or identical elements.

DETAILED DESCRIPTION

The present disclosure relates to a substrate processing systemincluding an integrated, flush-mount showerhead that delivers uniformradicals and filters ions from a remote plasma source. The showerheadprovides uniform temperature control by supplying heat transfer fluid tochannels through a center portion of the showerhead to maintain auniform and controlled temperature. The showerhead also supplies uniformprecursor gas flow delivery to a chamber including the substrate. Insome examples, the substrate processing system can be used to depositconformal carbide films, although other types of film can be deposited.

Referring now to FIG. 1, a substrate processing system 10 includes anupper chamber 20 and a lower chamber 30. While a specific type ofsubstrate processing system is shown and described, other types may beused. While inductively coupled plasma is shown, other types of plasmageneration may be used such as capacitively coupled plasma, remoteplasma sources, or other suitable plasma generators.

In some examples, the upper chamber 20 may include a dome shapedchamber, although other chamber shapes can be used. A substrate support34 is arranged in the lower chamber 30. A substrate 36 is arranged onthe substrate support 34 during substrate treatment. A showerhead 40 isarranged between the upper chamber 20 and the lower chamber 30.Inductive coils 42 may be arranged around the upper chamber 20.

A gas delivery system 50-1 may be used to supply a process gas mixtureincluding plasma gas to the upper chamber 20. The gas delivery system50-1 includes one or more gas sources 52-1, 52-2, . . . , and 52-N,valves 54-1, . . . , and 54-N, mass flow controllers (MFC) 56-1, . . . ,and 56-N, and a manifold 58, although other types of gas deliverysystems can be used (where N is an integer). A gas delivery system 50-2delivers a process gas mixture including precursor gas to the showerhead40.

An RF plasma generator 66 includes an RF source 70 and a matchingnetwork 72. The RF plasma generator 66 selectively supplies RF power tothe inductive coil 42 (while plasma gas is supplied) to generate plasma62 in the upper chamber 20.

A thermal control system 86 may be used to supply heat transfer fluidsuch as gas or a liquid coolant to the showerhead 40 to control atemperature of the showerhead 40. A valve 88 and a pump 90 may be usedto evacuate reactants.

A controller 94 communicates with the gas delivery systems 50-1 and 50-2to selectively supply process gases as needed to the upper chamber 20and the showerhead 40. The controller 94 communicates with the RF plasmagenerator 66 to generate and extinguish plasma in the upper chamber 20.

The controller 94 communicates with the thermal control system 86 tocontrol a flow rate and temperature of heat transfer fluid that is usedto control the temperature of the showerhead 40. In some examples, theheat transfer fluid may include water, water mixed with ethylene glycol,perfluoropolyether fluorinated fluid or other fluid and/or one or moregases. In some examples, the thermal control system 86 controls the flowrate or temperature of the heat transfer fluid using closed loopcontrol. In other examples, the thermal control system 86 controls theflow rate and temperature using proportional integral derivative (PID)control. The heat transfer fluid may be provided in an open loop systemfrom a building water circulation system. In some examples, the heattransfer fluid is hermetically sealed from the vacuum chamber.

In some examples, the controller 94 may be connected to one or moretemperature sensors (not shown) arranged in the showerhead 40 to senseone or more temperatures of the showerhead 40. In some examples, thecontroller 94 may be connected to one or more pressure sensors (notshown) arranged in the showerhead 40 to sense one or more pressures inthe processing chamber. The controller 94 communicates with the valve 88and the pump 90 to control pressure within the upper and lower chambers20, 30 and to selectively evacuate reactants therefrom.

Referring now to FIGS. 2A-3, a top surface 102, a bottom surface 104 anda side surface 108 of the showerhead 40 are shown. In FIG. 2A, theshowerhead 40 includes a plurality of spaced through holes 110 that passfrom the top surface 102 of the showerhead 40 to the bottom surface 104of the showerhead 40 in an axially central portion or center of theshowerhead. In some examples, an O-ring 111 may be located between thebottom surface 104 of the showerhead 40 and the lower chamber 30 asshown in FIG. 2B. A groove 113 may be located on one or both of theshowerhead 40 and the lower chamber 30 to position the O-ring 111.

A plurality of secondary gas injectors 112 supply secondary gas such asprecursor gas from the showerhead 40. In some examples, the secondarygas injectors 112 extend downwardly from the bottom surface 104 of theshowerhead 40 in the center portion of the showerhead 40. In someexamples, the secondary gas injectors 112 include a restriction (notshown) on the bottom surface 104 to prevent back-diffusion and to makegas flow uniform from one secondary gas injector to another. Therestriction may induce choked flow conditions.

In FIG. 3, the showerhead 40 includes pairs of thermal fluid ports 120,122 to act as an inlet and outlet. The showerhead 40 may contain morethan one thermal fluid plenum with more pairs of ports. A leakcollection tray 128 may be arranged around one or both of the thermalfluid ports 120, 122. The leak collection tray 128 may be arrangedoutside of the upper and lower chambers. The leak collection tray 128allows leak detection. In some examples, an O-ring 115 may be locatedbetween the top surface 102 of the showerhead 40 and the upper chamber20. A groove may be located on one or both of the showerhead 40 and theupper chamber 20 to position the O-ring 111 in a manner similar to thatshown in FIG. 2B.

Referring now to FIG. 4A, the through holes 110 and the secondary gasinjectors 112 of the showerhead 40 may be arranged in various patterns.For example, the through holes 110 and the secondary gas injectors 112of the showerhead 40 shown in FIG. 4A may have an offset triangularpattern T. Alternate patterns include rectangular, radial, hexagonal orspiral patterns, although other patterns can be used. In some examples,spacing of the secondary gas injectors 112 is in a range from 0.25″ to2″. In some examples, the through holes 110 may have the same spacing asthe secondary gas injectors, although different spacing may be used asshown in FIGS. 4B and 4C.

In some examples, the through holes 110 may include a plurality ofsmaller through holes that are clustered around each secondary gasinjector 112 as shown in the examples in FIGS. 4B and 4C. Thearrangement of the through holes 110 around the secondary gas injectors112 can be uniform as shown in FIG. 4B or non-uniform as shown in FIG.4C. In some examples, a through hole 110-R is located on a radial lineof the showerhead 40 on a side of the secondary gas injector closes to acenter of the showerhead 40.

Referring now to FIGS. 5A-8B, side cross-sectional views of theshowerhead 40 are shown. In FIG. 5A, the through holes 110 pass from thetop surface 102 of the showerhead 40 to the bottom surface 104 thereof.One or more heat transfer fluid plenums 140 are located in one or moreplanes that are perpendicular to the through holes 110 and parallel butoffset from the top surface 102 of the showerhead 40. One or moresecondary gas plenums 150 are located in one or more planes that areperpendicular to the through holes 110 and parallel but offset from thebottom surface 104 of the showerhead 40 and the one or more planesincluding the heat transfer fluid plenums 140. The configuration shownis the heat transfer fluid plenum above the secondary gas plenum. Theplenums may be reversed so that the secondary gas plenum is above theheat transfer fluid plenum.

The one or more heat transfer fluid plenums 140 are connected to thermalfluid ports 120, 122. The one or more secondary gas plenums 150 receivegas from the secondary gas inlet (FIG. 2A) and supply the secondary gasflow to flow channels 152 of the secondary gas injectors 112.

In some examples, the secondary gas injectors 112 extend a predetermineddistance away from a bottom surface of the showerhead 40 to reducedeposition of film on the showerhead 40. In some examples, thepredetermined distance is in a range from 0.1″ to 1.5″, although otherdistances can be used. In some examples, the secondary gas injectors 112include a restriction to prevent back diffusion and ensure flowuniformity from one secondary gas injector to another. In some examples,the through holes 110 have a diameter in a range from 0.05″ to 0.3″.

In FIG. 5B, the showerhead 40 can be made of multiple layers including atop layer 163, a middle layer 165 and a bottom layer 167 that areconnected together. More layers may be added to create additionalplenums. In some examples, the showerhead 40 can be manufactured usingvacuum brazing, tungsten inert gas (TIG) welding, or electron beamwelding to enable complex and unique geometries at a reasonable cost.Vacuum braze joining allows the showerhead to be machined as flat plateswith grooves cut into the plates with a layer of braze between eachplate. Welding techniques require more complex sub-components for theweld to access all areas which require sealing. Posts and correspondingholes may be machined to raise the sealing area to the surface of thepart where it is accessible to weld.

In some examples, a top surface of the middle layer 165 defines the oneor more heat transfer fluid plenums 140 and a bottom surface of themiddle layer 165 defines the one or more secondary gas plenums 150.However, a bottom surface of the top layer 163 can be used to partiallyor fully define the one or more heat transfer fluid plenums 140 and thetop surface of the bottom layer 167 can be used to fully or partiallydefine the one or more secondary gas plenums.

In some examples, the thickness of the plenums and material above andbelow them is 0.05″ to 0.25″, although other thicknesses can be used.The thickness of the material in-between and above/below the plenums isdetermined by the strength needed to support the fluid pressure andmaterial thickness required for manufacturing. A thickness of the heattransfer fluid plenum 140 may be sized to reduce a pressure drop of thefluid. A size of the secondary gas plenum 150 may be selected largeenough to allow uniform distribution of gas to each injector 112. Thethickness of each layer should be minimized to reduce the overallthickness to reduce loss of radicals in the through holes 110.

In some examples, the thickness of the top layer 163 and the bottomlayer 167 is in a range from 0.075″ to 0.125″, although otherthicknesses can be used. In some examples, the thickness of the toplayer 163 and the bottom layer 167 is 0.1″, although other thicknessescan be used. In some examples, the thickness of the middle layer 165 isin a range from 0.4″ to 0.6″, although other thicknesses can be used. Insome examples, the thickness of the middle layer 165 is 0.5″, althoughother thicknesses can be used. In some examples, the thickness of theshowerhead is less than or equal to 1″. In some examples, the thicknessof the showerhead is less than or equal to 0.7″.

In FIGS. 6 and 7, the leak collection tray 128 is shown. The leakcollection tray 128 includes a recess that is arranged around at leastone of the thermal fluid ports 120, 122. In some examples, the recess iscylinder-shaped, although other shapes can be used.

In FIG. 8A, some examples include a cylindrical wall 210 that extendsdownwardly (near or spaced radially inwardly) from a radially outer edge208 of the showerhead 40 towards the substrate 36 (and radially outsideof the through holes 110 and the secondary gas injectors 112). Thecylindrical wall 210 may be integrated with or attached to theshowerhead 40. The cylindrical wall 210 improves thermal uniformitybetween the showerhead 40 and the chamber wall seen by the substrate.The cylindrical wall 210 may also be used to control exhaust portpumping non-uniformity by creating a flow restriction between the walland the substrate support 34. In some examples, the cylindrical wall 210extends below a plane including a top surface of the substrate support34.

In FIG. 8B, some examples include a cylindrical wall 211 that extendsupwardly (near or spaced radially inwardly) from a radially outer edge208 of the showerhead 40 (and radially outside of the through holes 110and the secondary gas injectors 112). The cylindrical wall 211 may beintegrated with or attached to the top surface of showerhead 40. Thecylindrical wall 211 provides a mounting surface for mounting a radicalsource.

Referring now to FIG. 9-10, an example arrangement of the one or moreheat transfer fluid plenums 140. In FIG. 9, the top surface of themiddle layer 165 is shown. The one or more heat transfer fluid plenums140 include a first plenum 156-1. In some examples, the first plenum156-1 has an arcuate shape, although other shapes can be used. In someexamples, a plurality of restrictions 158-1 is arranged adjacent to oneanother on one side of the first plenum 156-1. Spacing between each ofthe plurality of restrictions 158-1 is selected to restrict anddistribute flow from the first plenum 156-1 into a second plenum 156-2.In some examples, each the plurality of restrictions 158-1 includes apost having a round, elliptical or oblong shape, although other shapescan be used. The plurality of restrictions 158-1 may be used to makefluid flow between the flow channels 160 more uniform and to eliminatejetting effects. Alternately, one or more of the flow channels 160 caninclude a restriction 164 to control flow as shown in FIG. 10. If theflow channels 160 include the restriction 164, the plurality ofrestrictions 158-1 can be omitted and the first and second plenums 156-1and 156-2 can be a single plenum.

The second plenum 156-2 opens into first ends of flow channels 160. Insome examples, the flow channels 160 have a triangular, square-wave,curved or generally sinusoidal shape to increase surface area. Secondends of the flow channels 160 are connected to a third plenum 156-3arranged at an opposite side of the showerhead 40. A plurality ofrestrictions 158-2 is arranged on one side of the third plenum 156-3.Each of the plurality of restrictions 158-2 is arranged to restrict flowinto a fourth plenum 156-4. The fourth plenum 156-4 is connected to anoutlet. If the flow channels 160 include the restriction 164, theplurality of restrictions 158-2 can be omitted and the third and fourthplenums 156-3 and 156-4 can be a single plenum.

In some examples, the thermal fluid flow channels 160 have a channel tochannel non-uniformity of less than or equal to 10% flow rate. In someexamples, the thermal fluid flow rate is 10 gallons per minute andcontrols the entire showerhead surface to +−1 degree Celsius. In someexamples, the secondary gas injectors 112 have flow non-uniformity lessthan or equal to 1% mass flow rate. In some examples, the secondary gasinjectors 112 have non-uniformity less than or equal to 0.1% mass flowrate.

In FIG. 11, the bottom surface of the middle layer 165 is shown. The oneor more secondary gas plenums 150 include a gas inlet 172 and a flowpassage 174 in fluid communication with a first plenum 176-1 and asecond plenum 176-2. A first plurality of walls 180 are arranged betweenthe first plenum 176-1 and the second plenum 176-2. A plurality of slots184 is arranged between ends of the plurality of walls 180 to restrictflow between the first plenum 176-1 and the second plenum 176-2. In someexamples, the first plenum 176-1 is ring-shaped, the second plenum 176-2is circular and the first plurality of walls 180 is arcuate-shaped,although other shapes can be used.

A second plurality of walls 190 is arranged around the through holes110. In some examples, the second plurality of walls 190 has acylindrical shape, although other shapes can be used. In some examples,a top edge of the second plurality of walls 190 provides a bonding areato create a vacuum seal between the second plenum 176-2 and the throughholes 110. In some examples, a plurality of restrictions 186 is providedat inlets of the secondary gas injectors 112 to control flow of thesecondary gas from the second plenum 176-2 to the lower chamber 30.

In some examples, the slots 184 are sized relative to the restrictions186 such that the pressure drop ΔP_(slots) at the slots 184 issignificantly greater than the pressure drop ΔP_(first plenum). In someexamples, ΔP_(slots) is 20 times greater than ΔP_(first plenum). In someexamples, ΔP_(slots) is 5 times greater than ΔP_(first plenum).

Referring now to FIGS. 12-14, a middle portion 300 of another showerhead40 is shown to include heat transfer fluid inlets and outlets arrangedalong one side thereof. In other words, the flow channels travel fromthe inlets across the showerhead and return back across the showerheadto the outlets.

In FIG. 12, a top side of the middle portion 300 is shown. A fluid inlet310 is connected to fluid inlet plenum 320. In some examples, the fluidinlet plenum 320 is arcuate-shaped. Inlets 324 to a plurality of flowchannels 330 are connected to the fluid inlet plenum 320. The pluralityof flow channels 330 traverse across the showerhead 40, turn and returnback to outlets 334 that are located between adjacent ones of the inlets324. While the flow channels 330 are shown as straight segments,non-straight flow channels such as those shown above can be used toincrease surface area and heat transfer (or a combination of straightand curved can be used).

The outlets 334 pass through gas vias 338 in the middle portion 300 toan outlet plenum 350 located on a bottom side of the middle portion 300in FIG. 13. The outlet plenum 350 is connected to a fluid outlet 358. Ascan be appreciated, the bottom surface of the middle portion 300 mayalso include a secondary gas plenum similar to that shown above in FIG.11. The size of the vias 338 may be varied to compensate for non-uniformflow rate from channel to channel to achieve the same uniformity asusing restrictions 158-1 or restrictions 158-2.

The integrated showerheads described herein deliver sufficient anduniform radicals, filter ions from a remote plasma source, provideuniform temperature control, and supply uniform precursor. In someexamples, thermal control provided by the showerheads including the heattransfer fluid channels described above control thermal non-uniformityacross the substrate to less than 5° C. The heat transfer fluid channelsare also capable of controlling the heat generated from the plasmacontained in the volume of the upper chamber 20. The showerhead furtherincludes an internal secondary gas plenum that provides uniformprecursor delivery to the lower chamber. In some examples, gas outletsfrom the secondary gas plenum are offset by a predetermined distancefrom a bottom surface of the showerhead to minimize deposition on theshowerhead and extend time between cleans.

The foregoing description is merely illustrative in nature and is in noway intended to limit the disclosure, its application, or uses. Thebroad teachings of the disclosure can be implemented in a variety offorms. Therefore, while this disclosure includes particular examples,the true scope of the disclosure should not be so limited since othermodifications will become apparent upon a study of the drawings, thespecification, and the following claims. It should be understood thatone or more steps within a method may be executed in different order (orconcurrently) without altering the principles of the present disclosure.Further, although each of the embodiments is described above as havingcertain features, any one or more of those features described withrespect to any embodiment of the disclosure can be implemented in and/orcombined with features of any of the other embodiments, even if thatcombination is not explicitly described. In other words, the describedembodiments are not mutually exclusive, and permutations of one or moreembodiments with one another remain within the scope of this disclosure.

Spatial and functional relationships between elements (for example,between modules, circuit elements, semiconductor layers, etc.) aredescribed using various terms, including “connected,” “engaged,”“coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and“disposed.” Unless explicitly described as being “direct,” when arelationship between first and second elements is described in the abovedisclosure, that relationship can be a direct relationship where noother intervening elements are present between the first and secondelements, but can also be an indirect relationship where one or moreintervening elements are present (either spatially or functionally)between the first and second elements. As used herein, the phrase atleast one of A, B, and C should be construed to mean a logical (A OR BOR C), using a non-exclusive logical OR, and should not be construed tomean “at least one of A, at least one of B, and at least one of C.”

In some implementations, a controller is part of a system, which may bepart of the above-described examples. Such systems can comprisesemiconductor processing equipment, including a processing tool ortools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a substrate pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor substrate or substrate. The electronics may be referred toas the “controller,” which may control various components or subparts ofthe system or systems. The controller, depending on the processingrequirements and/or the type of system, may be programmed to control anyof the processes disclosed herein, including the delivery of processinggases, temperature settings (e.g., heating and/or cooling), pressuresettings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, substrate transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the controller may be defined as electronics havingvarious integrated circuits, logic, memory, and/or software that receiveinstructions, issue instructions, control operation, enable cleaningoperations, enable endpoint measurements, and the like. The integratedcircuits may include chips in the form of firmware that store programinstructions, digital signal processors (DSPs), chips defined asapplication specific integrated circuits (ASICs), and/or one or moremicroprocessors, or microcontrollers that execute program instructions(e.g., software). Program instructions may be instructions communicatedto the controller in the form of various individual settings (or programfiles), defining operational parameters for carrying out a particularprocess on or for a semiconductor substrate or to a system. Theoperational parameters may, in some embodiments, be part of a recipedefined by process engineers to accomplish one or more processing stepsduring the fabrication of one or more layers, materials, metals, oxides,silicon, silicon dioxide, surfaces, circuits, and/or dies of asubstrate.

The controller, in some implementations, may be a part of or coupled toa computer that is integrated with the system, coupled to the system,otherwise networked to the system, or a combination thereof. Forexample, the controller may be in the “cloud” or all or a part of a fabhost computer system, which can allow for remote access of the substrateprocessing. The computer may enable remote access to the system tomonitor current progress of fabrication operations, examine a history ofpast fabrication operations, examine trends or performance metrics froma plurality of fabrication operations, to change parameters of currentprocessing, to set processing steps to follow a current processing, orto start a new process. In some examples, a remote computer (e.g. aserver) can provide process recipes to a system over a network, whichmay include a local network or the Internet. The remote computer mayinclude a user interface that enables entry or programming of parametersand/or settings, which are then communicated to the system from theremote computer. In some examples, the controller receives instructionsin the form of data, which specify parameters for each of the processingsteps to be performed during one or more operations. It should beunderstood that the parameters may be specific to the type of process tobe performed and the type of tool that the controller is configured tointerface with or control. Thus as described above, the controller maybe distributed, such as by comprising one or more discrete controllersthat are networked together and working towards a common purpose, suchas the processes and controls described herein. An example of adistributed controller for such purposes would be one or more integratedcircuits on a chamber in communication with one or more integratedcircuits located remotely (such as at the platform level or as part of aremote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, anatomic layer deposition (ALD) chamber or module, an atomic layer etch(ALE) chamber or module, an ion implantation chamber or module, a trackchamber or module, and any other semiconductor processing systems thatmay be associated or used in the fabrication and/or manufacturing ofsemiconductor substrates.

As noted above, depending on the process step or steps to be performedby the tool, the controller might communicate with one or more of othertool circuits or modules, other tool components, cluster tools, othertool interfaces, adjacent tools, neighboring tools, tools locatedthroughout a factory, a main computer, another controller, or tools usedin material transport that bring containers of substrates to and fromtool locations and/or load ports in a semiconductor manufacturingfactory.

What is claimed is:
 1. A substrate processing system, comprising: afirst chamber including a substrate support; a showerhead arranged abovethe first chamber and configured to filter ions and deliver radicalsfrom a plasma source to the first chamber, wherein the showerheadincludes: a top layer; a bottom layer; a middle layer having a firstsurface that directly contacts the top layer and a second surface thatdirectly contacts the bottom layer; a heat transfer fluid plenumconfigured to control a temperature of the showerhead and including: afirst plenum formed in the first surface of the middle layer andconfigured to receive heat transfer fluid from a heat transfer fluidinlet; a second plenum formed in the second surface of the middle layerand configured to output heat transfer fluid to a heat transfer fluidoutlet; and flow channels that are formed in the first surface of themiddle layer, that include inlets, respectively, that include outlets,respectively, and that fluidly connected the inlets with the outlets,respectively; vias that extend through the middle layer from the firstsurface to the second surface and that fluidly connect the outlets,respectively, with the second plenum; a secondary gas plenum including asecondary gas inlet to receive secondary gas and secondary gas injectorsto inject the secondary gas into the first chamber; and through holespassing through the top, middle, and bottom layers, wherein the throughholes are not in fluid communication with the heat transfer fluid plenumor the secondary gas plenum.
 2. The substrate processing system of claim1 wherein the flow channels each include non-straight segments.
 3. Thesubstrate processing system of claim 1 wherein the flow channels eachinclude both straight segments and non-straight segments.
 4. Thesubstrate processing system of claim 1 wherein the outlets of the flowchannels are located between adjacent ones of the inlets of the flowchannels.
 5. The substrate processing system of claim 1, wherein theflow channels extend away from the inlets, respectively, turn, andreturn to the outlets, respectively.
 6. The substrate processing systemof claim 1, wherein the first plenum is arcuate shaped.
 7. The substrateprocessing system of claim 1, wherein the second plenum is arcuate. 8.The substrate processing system of claim 1, wherein the heat transferplenum further includes the heat transfer fluid inlet, and wherein theheat transfer fluid inlet is formed in the first surface of the middlelayer.
 9. The substrate processing system of claim 1, wherein the heattransfer plenum further includes the heat transfer fluid outlet, andwherein the heat transfer fluid outlet is formed in the second surfaceof the middle layer.
 10. The substrate processing system of claim 1,wherein the secondary gas plenum includes; a first gas plenum; a secondgas plenum; and a flow restriction arranged between the first gas plenumand the second gas plenum.
 11. The substrate processing system of claim10, wherein the flow restriction comprises: a first walls; and a slotsdefined between the first walls.
 12. The substrate processing system ofclaim 11, wherein the first walls form an arcuate-shape.
 13. Thesubstrate processing system of claim 11, further comprising second wallsarranged around the through holes in the second gas plenum.
 14. Thesubstrate processing system of claim 13, wherein the second walls form acylinder-shape.
 15. The substrate processing system of claim 10, whereinthe secondary gas injectors are in fluid communication with the secondgas plenum.
 16. The substrate processing system of claim 15, furthercomprising restrictions arranged between the second gas plenum and thesecondary gas injectors.
 17. The substrate processing system of claim 1,further comprising: a second chamber arranged above the first chamber,wherein the showerhead is arranged between the first chamber and thesecond chamber; a coil arranged around the second chamber; and an RFgenerator connected to the coil to generate plasma in the secondchamber.
 18. The substrate processing system of claim 1, wherein theheat transfer fluid comprises liquid.
 19. The substrate processingsystem of claim 1, wherein the heat transfer fluid comprises gas. 20.The substrate processing system of claim 1, wherein the heat transferfluid does not flow into the first chamber.
 21. The substrate processingsystem of claim 1, wherein the showerhead includes a cylindrical wallthat extends from a bottom surface thereof and that is located radiallyoutside of the through holes and the secondary gas injectors.
 22. Thesubstrate processing system of claim 1, wherein the showerhead includesa cylindrical wall that extends upwardly from a top surface thereof andthat is located radially outside of the through holes and the secondarygas injectors.
 23. The substrate processing system of claim 1, furthercomprising a first O-ring arranged between a top surface of theshowerhead and a second chamber and a second O-ring arranged between abottom surface of the showerhead and the first chamber.
 24. A showerheadfor a substrate processing chamber, the showerhead comprising: a toplayer; a bottom layer; a middle layer having a first surface thatdirectly contacts the top layer and a second surface that directlycontacts the bottom layer; a heat transfer fluid plenum including: afirst plenum formed in the first surface of the middle layer andconfigured to receive heat transfer fluid from a heat transfer fluidinlet; a second plenum formed in the second surface of the middle layerand configured to output heat transfer fluid to a heat transfer fluidoutlet; and flow channels that are formed in the first surface of themiddle layer, that include inlets, respectively, that include outlets,respectively, and that fluidly connected the inlets with the outlets,respectively; vias that extend through the middle layer from the firstsurface to the second surface and that fluidly connect the outlets,respectively, with the second plenum; a secondary gas plenum including asecondary gas inlet to receive secondary gas and secondary gas injectorsto inject the secondary gas; and through holes passing through the top,middle, and bottom layers, wherein the through holes are not in fluidcommunication with the heat transfer fluid plenum or the secondary gasplenum.